to-220ac pb free plating product F30S60S 30amperes,600volts switchmode ultrafast recovery epitaxial diode pb internal configuration cathode(bottom side metal heatsink) cathode anode base backside ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature F30S60S using lastest fred fab process(planar passivation pellet) with ultrafast and soft recovery characteristics. absolute maximum ratings t c electrical characteristics t =25 c unless otherwise specified c =25 c unless otherwise specified symbol parameter test conditions values unit v maximum d.c. reverse voltage r 6 00 v v maximum repetitive reverse voltage rrm 6 00 v i average forward current f(av) t c 30 =1 0 0 c , per diode a i rms forward current f(rms) t c 42 =1 0 0 c , per diode a i non - repetitive surge forwar d current fsm t j 250 = 45 c , t=10ms, 50hz, sine a p power dissipation d 156 w t junction temperature j - 55 to +150 c t storage temperature range stg - 55 to +1 50 c torque module - to - sink recommended m 3 1.1 n m r thermal resistance th( j - c ) junction - to - case , per diode 0.8 c /w weight 2. 5 g symbol parameter test conditions min. typ. max. unit i reverse leakage current rm v r -- = 6 00 v -- 10 a v r = 6 00 v, t j -- = 1 25 c -- 10 m a v forward voltage f i f -- = 30 a 2.0 2. 4 v i f = 30 a , t j -- = 125 c 1. 6 -- v t reverse recovery time r r i f = 1 a , v r = 30 v, di f - - /dt= - 2 00a/s 20 -- ns t reverse recovery time r r v r = 3 0 0 v, i f = 30 a di f /dt= - 2 00a/s , t j -- =25 c 3 0 -- ns i max. reverse recovery current rrm -- 3 -- a t reverse recovery time r r v r = 3 0 0 v, i f = 30 a di f /dt= - 2 00a/s, t j -- =125 c 100 -- ns i max. reverse recovery current rrm -- 6 -- a s -- 1.6 -- -- F30S60S ? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 1/3 rev.08t
i f (a) v f v fig1. forward voltage drop vs forward current t j = 1 25 c t j =25 c 60 20 10 0 0.5 1.0 1.5 2.0 2.5 3 .0 di f /dt a/ s fig 2 . reverse recovery time vs di f /dt 8 0 0 6 00 4 00 2 00 100 0 4 0 t rr ( ns ) 8 0 1 2 0 16 0 2 0 0 v r = 3 0 0 v t j =1 25 c i rrm (a) di f /dt a/ s fig 3 . reverse recovery current vs di f /dt 12 10 6 4 2 0 10 0 2 00 4 00 6 00 8 00 di f /dt a/ s fig 4 . reverse recovery charge vs di f /dt 8 0 0 6 00 4 00 2 00 10 0 0 10 0 q rr ( n c ) 20 0 40 0 50 0 v r = 3 0 0 v t j =1 25 c v r = 3 00 v t j =1 25 c i f(av) 0 5 15 35 20 1 0 z thjc (k/w) t c ( c ) fig 5 . forward current vs.case temperature 25 50 75 1 25 1 75 1 0 1 10 - 1 10 - 2 10 - 3 rectangular pulse duration (seconds) fig 6 . transient thermal impedance 100 1 50 25 6 00 t j =25 c t j =25 c t j =25 c 50 8 1 0.1 0.01 40 30 300 30 10 F30S60S ? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 2/3 rev.08t
dimensions to-220ac fig 7 . diode reverse recovery t est circuit and wav eform i f di f /dt t rr i rrm q rr 0.25 i rrm 0.9 i rrm F30S60S ? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 3/3 rev.08t
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